Luminescence from GaAs/AlGaAs quantum wells induced by mid-infrared free electron laser pulses

被引：9
|
作者：
Nakano, H
Kubo, H
Mori, N
Hamaguchi, C
Eaves, L
机构：
[1] Osaka Univ, Dept Elect Engn, Suita, Osaka 5650871, Japan
[2] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2000年 / 7卷 / 3-4期
关键词：
free election laser; semiconductor heterostructure; impact ionization; Monte Carlo simulation;
D O I：
10.1016/S1386-9477(99)00382-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Luminescence from a GaAs/AlGaAs asymmetric double-quantum-well structure under intense mid-infrared ii-radiation with a free electron laser (FEL) has been observed. The FEL wavelength and power dependence has been measured, which is then compared with a result of a full-band Monte Carlo simulation. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：555 / 558
页数：4
相关论文
共 50 条
  • [21] Electric field influence on mid-infrared absorption and interband photoluminescence in tunnel-coupled GaAs/AlGaAs quantum wells
    Vinnichenko, M. Ya
    Sofronov, A. N.
    Balagula, R. M.
    Firsov, D. A.
    Vorobjev, L. E.
    [J]. 33RD INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2017, 864
  • [22] Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses
    Mori, N
    Nakano, H
    Kubo, H
    Hamaguchi, C
    Eaves, L
    [J]. PHYSICA B-CONDENSED MATTER, 1999, 272 (1-4) : 431 - 433
  • [23] Monte Carlo study on electron motion under mid-infrared free-electron-laser pulses
    Department of Electronic Engineering, Osaka Univ. 2-1 Yamada-oka, Suita C., Osaka, Japan
    不详
    [J]. Phys B Condens Matter, 1 (431-433):
  • [24] Ultrafast pulses from a mid-infrared fiber laser
    Hu, Tomonori
    Jackson, Stuart. D.
    Hudson, Darren. D.
    [J]. OPTICS LETTERS, 2015, 40 (18) : 4226 - 4228
  • [25] THE EFFECT OF PRESSURE ON THE LUMINESCENCE FROM GAAS/ALGAAS QUANTUM-WELLS
    PERLIN, P
    TRZECIAKOWSKI, W
    LITWINSTASZEWSKA, E
    MUSZALSKI, J
    MICOVIC, M
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (12) : 2239 - 2246
  • [26] Mid-infrared free electron laser induced periodic surface structures on semiconductors
    Tanaka, Y.
    Hashida, M.
    Hosokawa, C.
    Zen, H.
    Nagashima, T.
    Ozaki, N.
    Inoue, S.
    Sakabe, S.
    [J]. LASER APPLICATIONS IN MICROELECTRONIC AND OPTOELECTRONIC MANUFACTURING (LAMOM) XXVI, 2021, 11673
  • [27] Mid-infrared spectroscopic studies and lasing in GaAs-AlGaAs quantum cascade devices
    Wilson, LR
    Keightley, PT
    Cockburn, JW
    Duck, JP
    Skolnick, MS
    Clark, JC
    Hill, G
    Moran, M
    Grey, R
    [J]. PHYSICA E, 2000, 7 (3-4): : 713 - 717
  • [28] COMPLETE BLEACHING OF THE INTERSUBBAND ABSORPTION IN GAAS/ALGAAS QUANTUM-WELLS USING A FAR-INFRARED FREE-ELECTRON LASER
    HELM, M
    FROMHERZ, T
    MURDIN, BN
    PIDGEON, CR
    GEERINCK, KK
    HOVENYER, NJ
    WENCKEBACH, WT
    VANDERMEER, AFG
    VANAMERSFOORT, PW
    [J]. APPLIED PHYSICS LETTERS, 1993, 63 (24) : 3315 - 3317
  • [29] Mid-infrared electroluminescence from coupled quantum dots and wells
    [J]. Shields, P.A., 1600, American Institute of Physics Inc. (96):
  • [30] Mid-infrared electroluminescence from coupled quantum dots and wells
    Shields, PA
    Bumby, CW
    Li, LJ
    Nicholas, RJ
    [J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (05) : 2725 - 2730
12345