Resonance Spin Transfer Torque Magnetoresistive Memory

被引：0
|
作者：
Zhu, J. [1 ]
Shadman, A. [1 ]
机构：
[1] Carnegie Mellon Univ, Data Storage Syst Ctr, Pittsburgh, PA 15213 USA
来源：
2018 IEEE INTERNATIONAL MAGNETIC CONFERENCE (INTERMAG) | 2018年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页数：1
相关论文
共 50 条
  • [21] Spin-transfer torque switching in magnetic tunnel junctions and spin-transfer torque random access memory
    Diao, Zhitao
    Li, Zhanjie
    Wang, Shengyuang
    Ding, Yunfei
    Panchula, Alex
    Chen, Eugene
    Wang, Lien-Chang
    Huai, Yiming
    [J]. JOURNAL OF PHYSICS-CONDENSED MATTER, 2007, 19 (16)
  • [22] Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory
    Rybkina, A. A.
    Rybkin, A. G.
    Klimovskikh, I. I.
    Skirdkov, P. N.
    Zvezdin, K. A.
    Zvezdin, A. K.
    Shikin, A. M.
    [J]. NANOTECHNOLOGY, 2020, 31 (16)
  • [23] Reduction of switching current by spin transfer torque effect in perpendicular anisotropy magnetoresistive devices (invited)
    Sbiaa, R.
    Lua, S. Y. H.
    Law, R.
    Meng, H.
    Lye, R.
    Tan, H. K.
    [J]. JOURNAL OF APPLIED PHYSICS, 2011, 109 (07)
  • [24] Computing in Memory With Spin-Transfer Torque Magnetic RAM
    Jain, Shubham
    Ranjan, Ashish
    Roy, Kaushik
    Raghunathan, Anand
    [J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2018, 26 (03) : 470 - 483
  • [25] Progress and Prospects of Spin Transfer Torque Random Access Memory
    Chen, E.
    Apalkov, D.
    Driskill-Smith, A.
    Khvalkovskiy, A.
    Lottis, D.
    Moon, K.
    Nikitin, V.
    Ong, A.
    Tang, X.
    Watts, S.
    Kawakami, R.
    Krounbi, M.
    Wolf, S. A.
    Poon, S. J.
    Lu, J. W.
    Ghosh, A. W.
    Stan, M.
    Butler, W.
    Mewes, Tim
    Gupta, S.
    Mewes, C. K. A.
    Visscher, P. B.
    Lukaszew, R. A.
    [J]. IEEE TRANSACTIONS ON MAGNETICS, 2012, 48 (11) : 3025 - 3030
  • [26] Spin-Transfer-Torque MRAM: the Next Revolution in Memory
    Worledge, Daniel C.
    [J]. 2022 14TH IEEE INTERNATIONAL MEMORY WORKSHOP (IMW 2022), 2022, : 120 - 123
  • [27] A Statistical Model for Assessing the Fault Tolerance of Variable Switching Currents for a 1Gb Spin Transfer Torque Magnetoresistive Random Access Memory
    Asao, Y.
    Iwayama, M.
    Tsuchida, K.
    Nitayama, A.
    Yoda, H.
    Aikawa, H.
    Ikegawa, S.
    Kishi, T.
    [J]. 23RD IEEE INTERNATIONAL SYMPOSIUM ON DEFECT AND FAULT-TOLERANCE IN VLSI SYSTEMS, PROCEEDINGS, 2008, : 507 - 515
  • [28] Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search Speed
    Xu, Wei
    Zhang, Tong
    Chen, Yiran
    [J]. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, 2010, 18 (01) : 66 - 74
  • [29] A novel nonvolatile memory with spin torque transfer magnetization switching: Spin-RAM
    Hosomi, M
    Yamagishi, H
    Yamamoto, T
    Bessho, K
    Higo, Y
    Yamane, K
    Yamada, H
    Shoji, M
    Hachino, H
    Fukumoto, C
    Nagao, H
    Kano, H
    [J]. IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST, 2005, : 473 - 476
  • [30] Micromagnetic understanding of stochastic resonance driven by spin-transfer-torque
    Finocchio, G.
    Krivorotov, I. N.
    Cheng, X.
    Torres, L.
    Azzerboni, B.
    [J]. PHYSICAL REVIEW B, 2011, 83 (13)
12345