Advanced graphene recording device for spin-orbit torque magnetoresistive random access memory

被引：16

作者：

Rybkina, A. A. ^{[1
]}

Rybkin, A. G. ^{[1
]}

Klimovskikh, I. I. ^{[1
]}

Skirdkov, P. N. ^{[2
,3
]}

Zvezdin, K. A. ^{[2
,3
]}

Zvezdin, A. K. ^{[2
,3
]}

Shikin, A. M. ^{[1
]}

机构：

[1] St Petersburg State Univ, St Petersburg 198504, Russia

[2] Moscow Inst Phys & Technol, Dolgoprudnyi 141700, Russia

[3] Russian Acad Sci, Prokhorov Gen Phys Inst, Moscow 119991, Russia

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 16期

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

2D spintronics; graphene; spin-orbit torque magnetoresistive random access memory; SOT-MRAM; spin-orbit coupling; SPINTRONICS;

D O I：

10.1088/1361-6528/ab6470

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The non-volatile spin-orbit torque magnetic random access memory (SOT-MRAM) is a very attractive memory technology for near future computers because it has various advantages such as non-volatility, high density and scalability. In the present work we propose a model of a graphene recording device for the SOT-MRAM unit cell, consisting of a quasi-freestanding graphene intercalated with Au and an ultra-thin Pt layer sandwiched between graphene and a magnetic tunnel junction. As a result of using the claimed graphene recording memory element, a faster operation and lower energy consumption will be achieved under the recording information by reducing the electric current required to record. The efficiency of the graphene recording element was confirmed by the experimental results and the theoretical estimations.

引用

页数：8

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