MOS-IGBT power devices for high-temperature operation in smart power SOI technology

被引：2
|
作者：
Arbess, H. [1 ]
Bafleur, M.
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2011.07.037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a new MOS-IGBT device with improved characteristics for high-temperature operation. It is achieved by inserting in the same LDMOS device p(+) diffusions in the drain with various N(+)/P(+) ratios. 3D TCAD simulations are used to optimize the original structure in particular, to validate drain and source engineering solutions aimed at providing a latch-up free operation. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1980 / 1984
页数：5
相关论文
共 50 条
  • [1] Combined MOS-IGBT-SCR Structure for a Compact High-Robustness ESD Power Clamp in Smart Power SOI Technology
    Arbess, Houssam
    Bafleur, Marise
    Tremouilles, David
    Zerarka, Moustafa
    [J]. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2014, 14 (01) : 432 - 440
  • [2] Optimization of a MOS-IGBT-SCR ESD protection component in smart power SOI technology
    Arbess, H.
    Bafleur, M.
    Tremouffles, D.
    Zerarka, M.
    [J]. MICROELECTRONICS RELIABILITY, 2015, 55 (9-10) : 1476 - 1480
  • [3] SiC smart power JFET technology for high-temperature applications
    Sankin, I.
    Bondarenko, V.
    Kelley, R.
    Casady, J. B.
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1207 - 1210
  • [4] Diamond High-Temperature Power Devices
    Umezawa, Hitoshi
    Shikata, Shin-ichi
    [J]. 2009 21ST INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 2009, : 259 - 262
  • [5] High-temperature off-state characteristics of thin-SOI power devices
    Arnold, E
    Letavic, T
    Bhimnathwala, H
    [J]. IEEE ELECTRON DEVICE LETTERS, 1996, 17 (12) : 557 - 559
  • [6] On the high temperature operation of high voltage power devices
    Obreja, VVN
    Nuttall, KI
    [J]. CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2001, : 253 - 256
  • [7] SILICON-ON-INSULATOR TECHNOLOGY FOR HIGH-TEMPERATURE, SMART-POWER APPLICATIONS
    KOREC, J
    [J]. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 29 (1-3): : 1 - 6
  • [8] SiC devices for power and high-temperature applications
    Wondrak, W
    Niemann, E
    Kroetz, G
    Held, R
    Constapel, R
    [J]. IEEE INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE 98) - PROCEEDINGS, VOLS 1 AND 2, 1998, : 153 - 156
  • [9] SOI based technology for Smart Power applications
    Wessels, P. J. J.
    [J]. 2007 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 2007, : 5 - 7
  • [10] Optimal operation of smart energy hub considering high-temperature heat and power storage
    Lasemi, Mohammad Ali
    Arabkoohsar, Ahmad
    Hajizadeh, Amin
    Kamsamrong, Jirapa
    Das, Pratyush
    [J]. ENERGY REPORTS, 2023, 9 : 415 - 421
12345