MOS-IGBT power devices for high-temperature operation in smart power SOI technology

被引：2
|
作者：
Arbess, H. [1 ]
Bafleur, M.
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2011.07.037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a new MOS-IGBT device with improved characteristics for high-temperature operation. It is achieved by inserting in the same LDMOS device p(+) diffusions in the drain with various N(+)/P(+) ratios. 3D TCAD simulations are used to optimize the original structure in particular, to validate drain and source engineering solutions aimed at providing a latch-up free operation. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1980 / 1984
页数：5
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