MOS-IGBT power devices for high-temperature operation in smart power SOI technology

被引：2
|
作者：
Arbess, H. [1 ]
Bafleur, M.
机构：
[1] CNRS, LAAS, F-31077 Toulouse, France
来源：
MICROELECTRONICS RELIABILITY | 2011年 / 51卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2011.07.037
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We propose a new MOS-IGBT device with improved characteristics for high-temperature operation. It is achieved by inserting in the same LDMOS device p(+) diffusions in the drain with various N(+)/P(+) ratios. 3D TCAD simulations are used to optimize the original structure in particular, to validate drain and source engineering solutions aimed at providing a latch-up free operation. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1980 / 1984
页数：5
相关论文
共 50 条
  • [31] Lateral IGBT in thin SOI for high voltage, high speed power IC
    Leung, YK
    Paul, AK
    Plummer, JD
    Wong, SS
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (10) : 2251 - 2254
  • [32] Material requirements for high voltage, high power IGBT devices
    ABB Corporate Research Ltd, Baden-Dattwil, Switzerland
    Solid State Electron, 12 (2139-2151):
  • [33] Material requirements for high voltage, high power IGBT devices
    Zehringer, R
    Stuck, A
    Lang, T
    POWER SEMICONDUCTOR MATERIALS AND DEVICES, 1998, 483 : 369 - 380
  • [34] A Radiation Hardened Smart Power Switch Based on SOI Technology
    Chacon, Ronald H. G.
    de Carvalho, Eduardo G.
    de Emeri, Jair L., Jr.
    dos Santos, Angela A.
    Secheusk, Paula C.
    Diniz, Jose A.
    Finco, Saulo
    2023 IEEE 14TH LATIN AMERICA SYMPOSIUM ON CIRCUITS AND SYSTEMS, LASCAS, 2023, : 9 - 12
  • [35] High-performance SiC Power Devices and Modules with High Temperature Operation
    Nakamura, T.
    Nakano, Y.
    Sasagawa, M.
    Otsuka, T.
    Aketa, M.
    Miura, M.
    2011 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), 2011, : 51 - 52
  • [36] High temperature operation of a DC-DC power converter utilizing SiC power devices
    Ray, B
    Scofield, JD
    Spyker, RL
    Jordan, B
    Ryu, SH
    APEC 2005: TWENTIETH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1-3, 2005, : 315 - 321
  • [37] The high-temperature sodium coolant technology in nuclear power installations for hydrogen power engineering
    Kozlov F.A.
    Sorokin A.P.
    Alekseev V.V.
    Konovalov M.A.
    Thermal Engineering, 2014, 61 (05) : 348 - 356
  • [38] Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications
    Roig, Jaume
    Jordan, Donato
    Desoete, Bart
    Mouhoubi, Samir
    Rinaldi, Angela
    Bauwens, Filip
    Moens, Peter
    Tack, Marnix
    IEEE ELECTRON DEVICE LETTERS, 2009, 30 (12) : 1341 - 1343
  • [39] High-Temperature High-Power Operation of a 100 A SiC DMOSFET Module
    Salem, T. E.
    Urciuoli, D. P.
    Green, R.
    Ovrebo, G. K.
    APEC: 2009 IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION, VOLS 1- 4, 2009, : 653 - +
  • [40] Assembly and Packaging Technologies for High-Temperature and High-Power GaN Devices
    Bajwa, Adeel Ahmad
    Qin, Yangyang
    Reiner, Richard
    Quay, Ruediger
    Wilde, Juergen
    IEEE TRANSACTIONS ON COMPONENTS PACKAGING AND MANUFACTURING TECHNOLOGY, 2015, 5 (10): : 1402 - 1416
12345