InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

被引：25
|
作者：
Hurm, V. [1 ]
Benkhelifa, F. [1 ]
Driad, R. [1 ]
Loesch, R. [1 ]
Makon, R. [1 ]
Massler, H. [1 ]
Rosenzweig, J. [1 ]
Schlechtweg, M. [1 ]
Walcher, H. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 12期
关键词：
III-V semiconductors - Bandwidth - Optical communication - Semiconducting indium phosphide - Broadband amplifiers - Light modulators;
D O I：
10.1049/el:20081274
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A distributed amplifier for use as a modulator driver in next generation optical data communication systems has been manufactured using InP double-hetero bipolar transistor ( DHBT) technology with an emitter size of 0.7 x 1 mu m(2). The amplifier achieved a gain of 21 dB and a 3 dB bandwidth of 120 GHz, resulting in a gain-bandwidth product of 1.35 THz. Clearly open 100 Gbit/s 2(31)-1 non-return-to-zero pseudorandom bit sequence (NRZ PRBS) eye diagrams with an output voltage swing of 2.3 V have been measured.
引用
收藏
页码：705 / U87
页数：2
相关论文
共 50 条
  • [1] InP DHBT-based modulator driver module for 100 Gbit/s Ethernet applications
    Hurm, V.
    Makon, R. E.
    Driad, R.
    Benkhelifa, F.
    Loesch, R.
    Massler, H.
    Riessle, M.
    Rosenzweig, J.
    Schlechtweg, M.
    Tessmann, A.
    Walcher, H.
    [J]. ELECTRONICS LETTERS, 2009, 45 (24) : 1264 - 1265
  • [2] INP DHBT-BASED ICs FOR 100 Gbit/s DATA TRANSMISSION
    Driad, R.
    Makon, R. E.
    Hurm, V.
    Schneider, K.
    Benkhelifa, F.
    Loesch, R.
    Rosenzweig, J.
    [J]. 2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2008, : 247 - +
  • [3] Differential distributed amplifier with 2:1 selector in InP DHBT for 100 Gbit/s operation
    Dupuy, J. -Y.
    Konczykowska, A.
    Jorge, F.
    Riet, M.
    Berdaguer, P.
    Moulu, J.
    Godin, J.
    [J]. ELECTRONICS LETTERS, 2010, 46 (01) : 55 - 56
  • [4] Distributed Amplifiers in InP DHBT for 100-Gbit/s Operation
    Dupuy, J. -Y.
    Konczykowska, A.
    Jorge, F.
    Riet, M.
    Godin, J.
    [J]. 2010 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (MTT), 2010, : 920 - 923
  • [5] 100 Gbit/s fully integrated InP DHBT-based CDR/1:2 DEMUX IC
    Makon, R. E.
    Driad, R.
    Loesch, R.
    Rosenzweig, J.
    Schlechtweg, M.
    [J]. 2008 IEEE CSIC SYMPOSIUM, 2008, : 124 - 127
  • [6] Comparison of InP/InGaAs DHBT distributed amplifiers as modulator drivers for 80-Gbit/s operation
    Schneider, K
    Driad, R
    Makon, RE
    Massler, H
    Ludwig, M
    Quay, R
    Schlechtweg, M
    Weimann, G
    [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (11) : 3378 - 3387
  • [7] InP DHBT selector-driver with 2 x 2.7 V swing for 100 Gbit/s operation
    Konczykowska, A.
    Dupuy, J. -Y.
    Jorge, F.
    Riet, M.
    Moulu, J.
    Godin, J.
    [J]. ELECTRONICS LETTERS, 2009, 45 (24) : 1235 - U63
  • [8] InP DHBT-Based IC Technology for 100-Gb/s Ethernet
    Driad, Rachid
    Rosenzweig, Josef
    Makon, Robert Elvis
    Loesch, Rainer
    Hurm, Volker
    Walcher, Herbert
    Schlechtweg, Michael
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2011, 58 (08) : 2604 - 2609
  • [9] Differential distributed amplifier with 2: 1 selector in InP DHBT for 100-Gbit/s operation (vol 46, pg 55, 2010)
    Dupuy, J. -Y.
    Konczykowska, A.
    Jorge, F.
    Riet, M.
    Berdaguer, P.
    Moulu, J.
    Godin, J.
    [J]. ELECTRONICS LETTERS, 2010, 46 (06)
  • [10] InP DHBT-based monolithically integrated CDR/DEMUX IC operating at 80 Gbit/s
    Makon, Robert E.
    Driad, Rachid
    Schneider, Karl
    Ludwig, Manfred
    Aidarn, Rolf
    Quay, Rudiger
    Schlechtweg, Michael
    Weimann, Gunter
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2006, 41 (10) : 2215 - 2223
12345