InP DHBT-based distributed amplifier for 100 Gbit/s modulator driver operation

被引：25
|
作者：
Hurm, V. [1 ]
Benkhelifa, F. [1 ]
Driad, R. [1 ]
Loesch, R. [1 ]
Makon, R. [1 ]
Massler, H. [1 ]
Rosenzweig, J. [1 ]
Schlechtweg, M. [1 ]
Walcher, H. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, D-79108 Freiburg, Germany
来源：
ELECTRONICS LETTERS | 2008年 / 44卷 / 12期
关键词：
III-V semiconductors - Bandwidth - Optical communication - Semiconducting indium phosphide - Broadband amplifiers - Light modulators;
D O I：
10.1049/el:20081274
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A distributed amplifier for use as a modulator driver in next generation optical data communication systems has been manufactured using InP double-hetero bipolar transistor ( DHBT) technology with an emitter size of 0.7 x 1 mu m(2). The amplifier achieved a gain of 21 dB and a 3 dB bandwidth of 120 GHz, resulting in a gain-bandwidth product of 1.35 THz. Clearly open 100 Gbit/s 2(31)-1 non-return-to-zero pseudorandom bit sequence (NRZ PRBS) eye diagrams with an output voltage swing of 2.3 V have been measured.
引用
收藏
页码：705 / U87
页数：2
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