INP DHBT-BASED ICs FOR 100 Gbit/s DATA TRANSMISSION

被引：0
|
作者：
Driad, R. [1 ]
Makon, R. E. [1 ]
Hurm, V. [1 ]
Schneider, K. [1 ]
Benkhelifa, F. [1 ]
Loesch, R. [1 ]
Rosenzweig, J. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
来源：
2008 IEEE 20TH INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM) | 2008年
关键词：
indium phosphide; heterojunction bipolar transistors; integrated circuits; multiplexer; distributed amplifier; Ethernet;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper reports state-of-the-art mixed signal ICs, including a distributed amplifier and a multiplexer-core intended for use in 100 Gbit/s optical communication systems (Ethernet). Using a manufacturable InP DHBT technology, exhibiting current gains of > 80 and cut-off frequencies (f(T) and f(max)) of > 300 GHz, the broadband amplifier achieved a gain of 21 dB and a 3-dB bandwidth of 95 GHz (GxBW > 1 THz), whereas, the 2:1 multiplexer-core has been tested at data rates up to 138 Gbit/s.
引用
收藏
页码：247 / +
页数：2
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