Influence of antiferromagnetic ordering on ferroelectric polarization switching of YMnO3 epitaxial thin films

被引:0
|
作者
Maeda, K. [1 ]
Yoshimura, T. [1 ]
Fujimura, N. [1 ]
机构
[1] Osaka Prefecture Univ, Grad Sch Engn, Naka Ku, Osaka 5998531, Japan
关键词
D O I
10.1109/ISAF.2007.4393292
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Hexagonal YMnO(3) has antiferromagnetism and ferroelectricity simultaneously below 70 K. In this study, the domain switching behavior of ferroelectric polarization at around Neel temperature is investigated. From the experimental results of the frequency and temperature dependences of coercive electric filed (E(c)) obtained using polarization-electric field (P-E) hysteresis loop, the cross-correlation phenomena between magnetics and ferroelectrics are discussed in detail. The P-E hysteresis loops of the films were measured in the frequency range from 1 Hz to 10 kHz and the measurement temperature was varied from 10 to 150 K. Frequency dependence of Ec was analyzed using Ishibashi-Orihara's theory. Change in the E(c) was measured as a function of the temperature. It gradually increased with decreasing the temperature. In this regime, the change was well fitted to Devonshire's classical theory. Below 120 K, however, it drastically increased and appart from the theory.
引用
收藏
页码:441 / 444
页数:4
相关论文
共 50 条
  • [31] Crystallization behavior and ferroelectric properties of YMnO3 thin films on Si (100) substrates
    Yoo, DC
    Lee, JY
    Kim, IS
    Kim, YT
    [J]. FERROELECTRIC THIN FILMS X, 2002, 688 : 73 - 77
  • [32] Preparation of epitaxial orthorhombic YMnO3 thin films and the current–voltage rectifying effect
    S. Z. Li
    Z. B. Yan
    T. Wei
    S. J. Luo
    B. Liu
    K. F. Wang
    J.-M. Liu
    [J]. Applied Physics A, 2009, 94 : 975 - 980
  • [33] Effect of epitaxial strain on the magneto-electric coupling of YMnO3 thin films
    Singh, A. K.
    Snure, M.
    Tiwari, A.
    Patnaik, S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2009, 106 (01)
  • [34] Preparation of epitaxial orthorhombic YMnO3 thin films and the current-voltage rectifying effect
    Li, S. Z.
    Yan, Z. B.
    Wei, T.
    Luo, S. J.
    Liu, B.
    Wang, K. F.
    Liu, J. -M.
    [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2009, 94 (04): : 975 - 980
  • [35] Aging effect on the ferroelectric property of YMnO3 thin film
    Guo, HY
    Wilson, IH
    Xu, JB
    Luo, EZ
    Cheung, WY
    Ke, N
    Sundaral, B
    [J]. FERROELECTRICS, 2001, 259 (1-4) : 181 - 185
  • [36] Multiferroic behaviour of YMnO3 and YbMnO3 epitaxial films
    Fujimura, N.
    Shigemitsu, N.
    Takahashi, T.
    Ashida, A.
    Yoshimura, T.
    Fukumura, H.
    Harima, H.
    [J]. PHILOSOPHICAL MAGAZINE LETTERS, 2007, 87 (3-4) : 193 - 201
  • [37] Sol-gel derived ferroelectric YMnO3 films
    Teowee, G
    McCarthy, KC
    McCarthy, FS
    Dietz, BH
    Davis, DG
    Uhlmann, DR
    [J]. CHEMICAL ASPECTS OF ELECTRONIC CERAMICS PROCESSING, 1998, 495 : 327 - 332
  • [38] Dielectric anomalies in orthorhombic YMnO3 thin films
    Fina, I.
    Marti, X.
    Fabrega, L.
    Sanchez, F.
    Fontcuberta, J.
    [J]. THIN SOLID FILMS, 2010, 518 (16) : 4710 - 4713
  • [39] Polarization Switching Behavior of YMnO3 Thin Film at around Magnetic Phase Transition Temperature
    Maeda, Kazuhiro
    Yoshimura, Takeshi
    Fujimura, Norifumi
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (09) : 09KB051 - 09KB054
  • [40] Atomic layer deposition of YMnO3 thin films
    Choi, Ju H.
    Pham, Calvin
    Dorman, James
    Kim, Taeseung
    Chang, Jane P.
    [J]. JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2020, 498