Crystallization behavior and ferroelectric properties of YMnO3 thin films on Si (100) substrates

被引：0
|
作者：
Yoo, DC [1 ]
Lee, JY [1 ]
Kim, IS [1 ]
Kim, YT [1 ]
机构：
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea
来源：
FERROELECTRIC THIN FILMS X | 2002年 / 688卷
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D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
YMnO3 thin films were sputtered on Si (100) substrates under different ambient conditions. After rapid thermal annealing process at 850 degreesC, the YMnO3 film deposited in Ar ambient had random orientations and the YMnO3 film deposited in Ar+O-2 ambient was crystallized with distinct two layers, i.e., c-axis oriented layer in top region and random oriented layer in bottom region. Relations between the microstructure and the electrical properties of Pt/YMnO3/Si capacitor were investigated. Memory window and leakage current depended on the orientation of the YMnO3 thin films and the interfacial microstructure of the YMnO3/Si, respectively.
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页码：73 / 77
页数：5
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