Spin relaxation and weak antilocalization in a high density 2D electron gas in a AlGaN/GaN heterostructure

被引：0

作者：

Kim, Ki-Won ^{[1
]}

Kvon, Z. D. ^{[2
]}

Lee, J. H. ^{[1
]}

Olshanetsky, E. B. ^{[2
]}

Portal, J. C. ^{[3
,4
]}

机构：

[1] Kyungpook Natl Univ, 1370 Sankyuk Dong, Taegu, South Korea

[2] Inst Semicond Phys, Novosibirsk 630090, Russia

[3] CNRS, GHMF, MPI, FKF, F-38042 Grenoble 9, France

[4] INSA Toulouse, F-31077 Toulouse 4, France

来源：

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS | 2011年 / 1399卷

关键词：

GaN devices; Weak antilocalization; Small-angle scattering; QUANTUM-WELLS;

D O I：

10.1063/1.3666576

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present article we summarize the results of our study of the low field magnetoresistance (MR) in AlGaN/GaN samples with a two-dimensional electron gas (2DEG). All investigated samples have very close basic transport parameters, such as electron mobility and electron density, but show a rich variety of low magnetic field magnetoresistance behavior.

引用

页数：2

共 50 条

[1] The weak antilocalization and quantum scattering time in a two-dimensional electron gas in AlGaN/GaN heterostructure
Olshanetsky, E. B.
Kvon, Z. D.
Sassine, S.
Portal, J. C.
Cho, H. I.
Lee, J. H.
APPLIED PHYSICS LETTERS, 2008, 92 (24)
[2] Weak localization and interaction effects in 2D electron gas in AlGaN/GaN heterostructure in presence of phonons.
Renard, V
Kvon, ZD
Cho, HI
Lee, JH
Portal, JC
Physics of Semiconductors, Pts A and B, 2005, 772 : 445 - 446
[3] Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum
Skvortsov, MA
JETP LETTERS, 1998, 67 (02) : 133 - 139
[4] Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum
JETP Lett, 2 (133):
[5] Weak antilocalization in a 2D electron gas with chiral splitting of the spectrum
M. A. Skvortsov
Journal of Experimental and Theoretical Physics Letters, 1998, 67 : 133 - 139
[6] Weak antilocalization and localization phenomenon in AlGaN/GaN two-dimensional electron gas
Department of Physics, Lanzhou University, Lanzhou 730000, China
不详
不详
Wuli Xuebao, 2006, 5 (2498-2503):
[7] Thermoelectric Properties of n-type GaN and 2D Electron Gas in AlGaN-GaN Heterostructure
Bryan C.
Faucherand P.
Charles M.
Plissonnier M.
Savelli G.
Journal of Electronic Materials, 2021, 50 (3) : 1301 - 1306
[8] Electron spin resonance in a 2D system at a GaN/AlGaN heterojunction
Shchepetilnikov, A., V
Frolov, D. D.
Solovyev, V. V.
Nefyodov, Yu A.
Grosser, A.
Mikolajick, T.
Schmult, S.
Kukushkin, I., V
APPLIED PHYSICS LETTERS, 2018, 113 (05)
[9] The effect of interface roughness scattering on low field mobility of 2D electron gas in GaN/AlGaN heterostructure
Gökden, S
Baran, R
Balkan, N
Mazzucato, S
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2004, 24 (3-4): : 249 - 256
[10] Releasable AlGaN/GaN 2D Electron Gas Heterostructure Membranes for Flexible Wide-Bandgap Electronics
Zhang, Yi-Yu
An, Shu
Zheng, Yixiong
Lai, Junyu
Seo, Jung-Hun
Lee, Kwang Hong
Kim, Munho
ADVANCED ELECTRONIC MATERIALS, 2022, 8 (02)

← 1 2 3 4 5 →