Binding energy of biexcitons in two-dimensional semiconductors

被引：13
|
作者：
Liu, JJ [1 ]
Kong, XJ
Wei, CW
Li, SS
机构：
[1] Natl Lab Superlattices & Microstruct, Beijing 100083, Peoples R China
[2] Hebei Normal Univ, Dept Phys, Shijiazhuang 050016, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 1998年 / 15卷 / 08期
关键词：
D O I：
10.1088/0256-307X/15/8/016
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
The binding energies of a two-dimensional (2D) biexciton have been calculated variationally for all values of the effective electron-to-hole mass ratio a by using a three-parameter wave function. The ratio of the binding energy of a 2D biexciton to that of a 2D exciton is found to be from 0.582 to 0.220. The results agree fairly well with previous experimental results. The results of this approach are compared with those of earlier theories.
引用
收藏
页码：588 / 590
页数：3
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