Two-dimensional Wigner crystal in anisotropic semiconductors

被引:19
|
作者
Wan, X [1 ]
Bhatt, RN [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
D O I
10.1103/PhysRevB.65.233209
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We investigate the effect of mass anisotropy on the Wigner crystallization transition in a two-dimensional (2D) electron gas. The static and dynamical properties of a 2D Wigner crystal have been calculated for arbitrary 2D Bravais lattices in the presence of anisotropic mass, as may be obtainable in Si metal-oxide-semiconductor field-effect transistors with (110) surface, as well as the newly discovered organic semiconductor systems. By studying the stability of all possible lattices, we find significant changes in the crystal structure and melting density of the electron lattice with the lowest ground state energy.
引用
收藏
页码:2332091 / 2332094
页数:4
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