Polarized photodetectors based on two-dimensional semiconductors

Since the successful preparation of graphene in 2004 [1],two-dimensional materials have been rapidly developed[2-4]. In recent years, high-performance photodetectors based on two-dimensional (2D) semiconductors have emerged and covered a broad spectral band ranging from ultraviolet to infrared light [5-7]. Among them, the polarization-sensitive photodetectors based on anisotropic semiconductors introduce the polarization state into photodetection, which effectively increases the dimension of detection and obtain more comprehensive and accurate information of the detected objects.