Power dependence of NF3 plasma stability for in situ chamber cleaning

被引：10
|
作者：
Ji, B [1 ]
Elder, DL [1 ]
Yang, JH [1 ]
Badowski, PR [1 ]
Karwacki, EJ [1 ]
机构：
[1] Air Prod & Chem Inc, Allentown, PA 18195 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 08期
关键词：
D O I：
10.1063/1.1688994
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We investigated the stability of NF3 plasmas for in situ chamber cleaning in a production plasma-enhanced chemical vapor deposition reactor. An rf power threshold, normalized by NF3 molar number (P-nn) and NF3 flow rate (P-nf), is observed to be PnnPnf=39 (W/mu mol)(W/sccm) for stable plasmas with high NF3 destruction efficiency. This is rationalized by the energy required to maintain sufficient electron-ion pair creation in an electronegative discharge. (C) 2004 American Institute of Physics.
引用
收藏
页码：4446 / 4451
页数：6
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