The N2 diluted application in PECVD NF3 in-situ chamber cleaning for PFC reduction

被引:0
|
作者
Chen, M. H. [1 ]
Ni, C. T. [1 ]
Su, C. H. [1 ]
Chen, Y. L. [1 ]
机构
[1] TSMC Ltd, Thin Film Engn Dept Fab3, Hsinchu, Taiwan
关键词
PFC reduction; NF3 in-situ cleaning;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For plasma enhanced chemical vapor deposition (PECVD) chamber cleaning, the in-situ plasma cleaning method was widely used with C3F8/N2O/O-2 and NF3/He sources. A high efficiency NF3 in-situ cleaning recipe is demonstrated in diluting with diatomic gas, N-2. With lower first ionization energy and several dissociative electron attachment (DEA) reactions, the N-2 is characterized as catalyst and increase the dissociation of NF3. The cleaning uniformity problem is also solved by statistical design of experiment (DOE) approach; the well-optimized NF3/N-2 cleaning recipe offers 79.6% less PFC emission than C3F8 in-situ chamber clean.
引用
收藏
页码:163 / 165
页数:3
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