Power dependence of NF3 plasma stability for in situ chamber cleaning

被引：10

作者：

Ji, B ^{[1
]}

Elder, DL ^{[1
]}

Yang, JH ^{[1
]}

Badowski, PR ^{[1
]}

Karwacki, EJ ^{[1
]}

机构：

[1] Air Prod & Chem Inc, Allentown, PA 18195 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 95卷 / 08期

关键词：

D O I：

10.1063/1.1688994

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated the stability of NF3 plasmas for in situ chamber cleaning in a production plasma-enhanced chemical vapor deposition reactor. An rf power threshold, normalized by NF3 molar number (P-nn) and NF3 flow rate (P-nf), is observed to be PnnPnf=39 (W/mu mol)(W/sccm) for stable plasmas with high NF3 destruction efficiency. This is rationalized by the energy required to maintain sufficient electron-ion pair creation in an electronegative discharge. (C) 2004 American Institute of Physics.

引用

页码：4446 / 4451

页数：6

共 50 条

[41] Y2O3 wall interactions in Cl2 etching and NF3 cleaning plasmas
Ma, Tianyu
List, Tyler
Donnelly, Vincent M.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2017, 35 (03):
[42] Dry cleaning technology for removal of silicon native oxide employing hot NH3/NF3 exposure
Ogawa, Hiroki
Arai, Tomoharu
Yanagisawa, Michihiko
Ichiki, Takanori
Horiike, Yasuhiro
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2002, 41 (08): : 5349 - 5358
[43] Dry cleaning technology for removal of silicon native oxide employing hot NH3/NF3 exposure
Ogawa, H
Arai, T
Yanagisawa, M
Ichiki, T
Horiike, Y
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2002, 41 (08): : 5349 - 5358
[44] Etching of 4H-SiC using a NF3 inductively coupled plasma
Byungwhan Kim
Byung-Teak Lee
Journal of Electronic Materials, 2004, 33 : 1308 - 1312
[45] Preparation of functionally gradient fluorocarbon polymer films by plasma polymerization of NF3 and propylene
Tasaka, A
Komura, A
Uchimoto, Y
Inaba, M
Ogumi, Z
JOURNAL OF POLYMER SCIENCE PART A-POLYMER CHEMISTRY, 1996, 34 (02) : 193 - 198
[46] Ion flux's pressure dependence in an asymmetric capacitively coupled rf discharge in NF3
Mateev, E
Zhelyazkov, I
CENTRAL EUROPEAN JOURNAL OF PHYSICS, 2004, 2 (01): : 1 - 11
[47] NF3 plasma treatment of IM7/5260 for the improvement of moisture resistance
Ohno, S
Lee, MH
Ohuchi, FS
2001: A MATERIALS AND PROCESSES ODYSSEY, BOOKS 1 AND 2, 2001, 46 : 2312 - 2320
[48] Etching of 4H-SiC using a NF3 inductively coupled plasma
Kim, B
Lee, BT
JOURNAL OF ELECTRONIC MATERIALS, 2004, 33 (11) : 1308 - 1312
[49] Use of a neural network to model SiC etching in a NF3 inductively coupled plasma
Kim, B
Lee, BT
Han, JG
Kim, NJ
Choi, S
Han, SS
MODELLING AND SIMULATION IN MATERIALS SCIENCE AND ENGINEERING, 2005, 13 (08) : 1267 - 1277
[50] Surface modification of carbonaceous thin films by NF3 plasma and their effects on electrochemical properties
Fukutsuka, T
Matsuo, Y
Sugie, Y
Abe, T
Inaba, M
Ogumi, Z
MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 2002, 388 : 531 - 536

← 1 2 3 4 5 →