Subthreshold swings below 60 mV/dec in three-terminal nanojunctions at room temperature

被引：3
|
作者：
Mueller, C. R. [1 ,2 ,3 ]
Worschech, L. [1 ,2 ]
Forchel, A. [1 ,2 ]
机构：
[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany
[2] Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany
[3] Infineon Technol AG, D-59581 Warstein, Germany
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期
关键词：
FIELD-EFFECT TRANSISTORS; Y-BRANCH NANOJUNCTION; BALLISTIC JUNCTIONS; GAIN;
D O I：
10.1063/1.4754850
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Subthreshold swings below the thermal limit of 60 mV/dec are demonstrated in a three-terminal nanojunction (TTJ) at room temperature. The T-shaped TTJ with a 50 nm wide center branch was based on a modulation-doped GaAs/AlGaAs heterostructure and was defined by electron-beam lithography and wet chemical etching. Operated as in-plane gated field-effect transistor, transistor characteristics were demonstrated. Efficient switching with subthreshold swings smaller than 40 mV/dec was observed. These findings are attributed to a dynamic gate capacitance which improves the switching properties of the device significantly. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754850]
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页数：4
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