Subthreshold swings below 60 mV/dec in three-terminal nanojunctions at room temperature

被引：3

作者：

Mueller, C. R. ^{[1
,2
,3
]}

Worschech, L. ^{[1
,2
]}

Forchel, A. ^{[1
,2
]}

机构：

[1] Univ Wurzburg, Inst Phys, D-97074 Wurzburg, Germany

[2] Wilhelm Conrad Rontgen Res Ctr Complex Mat Syst, D-97074 Wurzburg, Germany

[3] Infineon Technol AG, D-59581 Warstein, Germany

来源：

APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 13期

关键词：

FIELD-EFFECT TRANSISTORS; Y-BRANCH NANOJUNCTION; BALLISTIC JUNCTIONS; GAIN;

D O I：

10.1063/1.4754850

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Subthreshold swings below the thermal limit of 60 mV/dec are demonstrated in a three-terminal nanojunction (TTJ) at room temperature. The T-shaped TTJ with a 50 nm wide center branch was based on a modulation-doped GaAs/AlGaAs heterostructure and was defined by electron-beam lithography and wet chemical etching. Operated as in-plane gated field-effect transistor, transistor characteristics were demonstrated. Efficient switching with subthreshold swings smaller than 40 mV/dec was observed. These findings are attributed to a dynamic gate capacitance which improves the switching properties of the device significantly. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4754850]

引用

页数：4

共 46 条

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