Direct relationship between sub-60 mV/dec subthreshold swing and internal potential instability in MOSFET externally connected to ferroelectric capacitor

被引：0

作者：

Li, Xiuyan ^{[1
]}

Toriumi, Akira ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Hongo, Tokyo 1138656, Japan

来源：

2018 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2018年

关键词：

NEGATIVE CAPACITANCE;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Steep subthreshold swing (SS) in ferroelectric (FE) FETs have been intensively discussed these years in terms of the negative capacitance(NC) effect, but still under debate. This paper demonstrates the direct correlation between sub-60 mV/dec SS and internal potential (V-int) enhancement in MOSFET externally connected to FE capacitor in DC mode through systematic experiments. It is shown that V-int enhancement only occurs in a limited voltage window, and that hysteresis-free steep SS is achievable by tuning the paraelectric capacitance. The present results support that the steep SS values so far reported are tightly related to FE domain switching around the coercive field rather than the ideal NC effect.

引用

页数：4

共 10 条

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