Random Telegraph Signal in Monolithic Active Pixel Sensors

被引：0
|
作者：
Deveaux, M. [1 ]
Amar-Youcef, S. [1 ]
Buedenbender, A. [1 ]
Doering, D. [1 ]
Froehlich, I. [1 ]
Muentz, C. [1 ]
Stroth, J. [3 ]
Wagner, F. M. [2 ]
机构：
[1] Goethe Univ Frankfurt, Inst Kernphys, D-60486 Frankfurt, Germany
[2] Tech Univ Mnchen, Forschungsneutronen Quelle Heinz Maier Leibnitz, D-85747 Garching, Germany
[3] GSI Helmholtzzentrum Schwerionenforsch GmbH, D-64291 Darmstadt, Germany
来源：
2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9 | 2009年
关键词：
Monolithic Active Pixel Sensors; CMOS-Sensors; Radiation damage; Random Telegraph Signal;
D O I：
暂无
中图分类号：
R8 [特种医学]; R445 [影像诊断学];
学科分类号：
1002 ; 100207 ; 1009 ;
摘要：
CMOS Monolithic Active Pixel Sensors (MAPS) technology allows integrating very small sensing elements with a pixel pitch of similar to 10 mu m together with analogue and digital signal processing circuits into a monolithic chip, which may be thinned down to a thickness of similar to 50 mu m. These features make MAPS an interesting technology for a broad range of applications in charged particle tracking. Intense R&D was performed in the last years in order reach the necessary radiation hardness. In the context of these studies, radiation induced Random Telegraph Signal (RTS) was found to introduce a substantial amount of accidental (noise) hits. In this work, we present a first systematic investigation of the rate of these fake hits as function of environmental conditions like accumulated radiation dose and temperature. Moreover, strategies to reduce the impact of RTS are studied.
引用
收藏
页码：2373 / +
页数：3
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