Monolithic Active Pixel Sensors adapted to future vertex detector requirements

被引：9
|
作者：
Deptuch, G
Besson, A
Claus, G
Colledani, C
Deveaux, M
Dulinski, W
Gay, A
Gaycken, G
Gornushkin, Y
Grandjean, D
Himmi, A
Hu, C
Valin, I
Winter, M
机构：
[1] Univ Strasbourg 1, LEPSI, IN2P3, F-67037 Strasbourg, France
[2] Univ Strasbourg 1, IReS, IN2P3, F-67037 Strasbourg, France
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2004年 / 535卷 / 1-2期
关键词：
active pixel sensors; CMOS; imaging; tracking; solid state detectors;
D O I：
10.1016/j.nima.2004.07.152
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
Monolithic active pixel sensor detectors are produced in the form of standard VLSI chips. The active volume is a thin, moderately doped silicon layer, operated undepleted. It acts as a substrate for the electronics seated on top of it. The development is aiming at future vertex detectors, e.g. the Linear Collider, and for medical imaging, e.g. radiotheraphy, dosimetry, etc. Over the last 4 years, 8 chips were fabricated. The first 6 devices are yet fully tested, proving the viability of the technology. The contribution summarises the performances achieved and provides an outlook on future work. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码：366 / 369
页数：4
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