Improved approach to Fowler-Nordheim plot analysis

被引:30
|
作者
Forbes, Richard G. [1 ,2 ]
Fischer, Andreas [3 ]
Mousa, Marwan S. [3 ]
机构
[1] Univ Surrey, Fac Engn & Phys Sci, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
[2] Univ Surrey, Fac Engn & Phys Sci, Dept Elect Engn, Guildford GU2 7XH, Surrey, England
[3] Mutah Univ, Dept Phys, Al Karak 61710, Jordan
来源
关键词
FIELD-EMISSION; ELECTRON-EMISSION; EMITTERS; BARRIER; METALS; AREA;
D O I
10.1116/1.4765080
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This article introduces an improved approach to Fowler-Nordheim (FN) plot analysis, based on a new type of intercept correction factor. This factor is more cleanly defined than the factor previously used. General enabling theory is given that applies to any type of FN plot of data that can be fitted using a FN-type equation. Practical use is limited to emission situations where slope correction factors can be reliably predicted. By making a series of well-defined assumptions and approximations, it is shown how the general formulas reduce to provide an improved theory of orthodox FN-plot data analysis. This applies to situations where the circuit current is fully controlled by the emitter characteristics, and tunneling can be treated as taking place through a Schottky-Nordheim (SN) barrier. For orthodox emission, good working formulas make numerical evaluation of the slope correction factor and the new intercept correction factor quick and straightforward. A numerical illustration, using simulated emission data, shows how to use this improved approach to derive values for parameters in the full FN-type equation for the SN barrier. Good self-consistency is demonstrated. The general enabling formulas also pave the way for research aimed at developing analogous data-analysis procedures for nonorthodox emission situations. (C) 2013 American Vacuum Society. [http://dx.doi.org/10.1116/1.4765080]
引用
收藏
页数:8
相关论文
共 50 条
  • [41] Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances
    Gerardi, C.
    Tripiciano, E.
    Cina, G.
    Lombardo, S.
    Garozzo, C.
    Corso, D.
    Betro, G.
    Pace, C.
    Crupi, F.
    [J]. SOLID-STATE ELECTRONICS, 2010, 54 (11) : 1319 - 1325
  • [42] Fowler-Nordheim erasing time prediction in flash memory
    Canet, P
    Bouquet, V
    Lalande, F
    Devin, J
    Leconte, B
    [J]. 2005 Non-Volatile Memory Technology Symposium, Proceedings, 2005, : 15 - 18
  • [43] Effects of the series resistance on Fowler-Nordheim tunneling oscillations
    Hsu, DS
    [J]. SOLID-STATE ELECTRONICS, 1997, 41 (03) : 513 - 514
  • [44] Simulation of Fowler-Nordheim Emission for Scanning Probe Lithography
    Lenk, Steve
    Kaestner, Marcus
    Lenk, Claudia
    Krivoshapkina, Yana
    Rangelow, Ivo W.
    [J]. 2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2017, : 108 - 109
  • [45] FOWLER-NORDHEIM TUNNELING AT A METAL-SEMICONDUCTOR INTERFACE
    ANDREWS, JM
    [J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (08): : 840 - &
  • [46] PARASITIC MOSFET DEGRADATION INDUCED BY FOWLER-NORDHEIM INJECTION
    KATO, M
    NISHIOKA, Y
    OKABE, T
    [J]. IEEE ELECTRON DEVICE LETTERS, 1990, 11 (12) : 590 - 592
  • [47] A simple method for determination of Fowler-Nordheim tunnelling parameters
    Casados-Cruz, G.
    Reyes-Barranca, M. A.
    Moreno-Cadenas, J. A.
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 2011, 98 (05) : 655 - 666
  • [48] ABOUT FOWLER-NORDHEIM PLOTS OF GERMANIUM FIELD EMITTERS
    ERNST, L
    [J]. PHYSICA STATUS SOLIDI, 1967, 24 (01): : 177 - &
  • [49] FOWLER-NORDHEIM TUNNELING IN SIO2 FILMS
    SNOW, EH
    [J]. SOLID STATE COMMUNICATIONS, 1967, 5 (10) : 813 - &
  • [50] Extraction of emission area from Fowler-Nordheim plots
    Forbes, RG
    Deane, JHB
    Hamid, N
    Sim, HS
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (03): : 1222 - 1226