Multiple gate NVM cells with improved Fowler-Nordheim tunneling program and erase performances

被引：1

作者：

Gerardi, C. ^{[1
]}

Tripiciano, E.

Cina, G.

Lombardo, S. ^{[2
]}

Garozzo, C. ^{[2
]}

Corso, D. ^{[2
]}

Betro, G. ^{[3
]}

Pace, C. ^{[3
]}

Crupi, F. ^{[3
]}

机构：

[1] Numonyx, Technol Transfer, I-95121 Catania, Italy

[2] CNR, Ist Microelettron & Microsistemi, I-95121 Catania, Italy

[3] Univ Calabria, Dipartimento Elettron Informat & Sistemist, I-87036 Arcavacata Di Rende, CS, Italy

来源：

SOLID-STATE ELECTRONICS | 2010年 / 54卷 / 11期

关键词：

Non-volatile memories; SONOS memories; TANOS memories; 3D memory cell; finFET; Multiple-gate transistor;

D O I：

10.1016/j.sse.2010.06.023

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Multiple gate tridimensional memory cells can have several additional advantages besides increased read current and excellent Ion/Ioff ratio, which are inherent in the multiple-gate transistor architecture. We show that tridimensional memory cells with rounded top geometry and SONOS storage stack strongly improve the Fowler-Nordheim tunneling program-erase performances because of an enhanced electric field effect and an increase of the cell coupling factor. Moreover, a remarkable enhancement of the tridimensional cell performances is expected if the blocking silicon oxide and the poly-silicon gate in the SONOS memory stack are replaced with a high-k dielectric and a high work-function metallic control gate. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1319 / 1325

页数：7

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