Design, Fabrication and Characterization of Ultra-High Voltage 4H-SiC MOSFET Transistors

被引:0
|
作者
Deng, Xiao-Chuan [1 ,2 ]
Tan, Ben [1 ,2 ]
Li, Jun-Tao [3 ]
Li, Xuan [1 ,2 ]
Zhang, Bo [1 ]
机构
[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, Inst Elect & Informat Engn Guangzhou, Dongguan 523808, Peoples R China
[3] China Acad Engn Phys, Microsyst & Terahertz Res Ctr, Mianyang 621900, Peoples R China
基金
中国国家自然科学基金;
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 10-kV silicon carbide MOSFET transistor with multi-zone gradient guard ring (MZG-GR) structure is designed, fabricated, and analyzed. Design and optimization based on two-dimensional device simulator TCAD is used to investigate the effects of MZG-GR technique on breakdown for SiC MOSFET devices. It is found that MZG-GR can achieve a maximum blocking voltage owing to alleviated electric field crowding in the periphery of the active area. Moreover, optimized MZG-GR structure exhibits good tolerances to total dose and surface charges. For the SiC MOSFET transistors with a 100 mu m thick epi-layer doped to 5x10(14) cm(-3), a measured breakdown voltage achieved is 13.6 kV at a source-drain current of 0.01 mA, corresponding to about 95% of the ideal value for a 1-D structure. Furthermore, the variation in reverse blocking voltage with respect to the ring spacing observed in the fabricated transistors shows a good agreement with the simulated results in the trend.
引用
收藏
页码:856 / 858
页数:3
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