Reliability of high voltage 4H-SiC MOSFET devices

被引:0
|
作者
Krishnaswami, Sumi [1 ]
Ryu, Sei-Hyung [1 ]
Heath, Bradley [1 ]
Agarwal, Anant [1 ]
Palmour, John [1 ]
Lelis, Aivars
Scozzie, Charles [2 ]
Scofield, James [3 ]
机构
[1] Cree Inc, SiC Power Device, 4600 Silicon Dr, Durham, NC 27703 USA
[2] Army Res Labs, Adelphi, MD 20783 USA
[3] Air Force Res Labs, Wright Patterson AFB, OH 45433 USA
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The commercialization of 4H-SiC MOSFETs will greatly depend on the reliability of gate oxide. Long-term gate oxide reliability and device stability of 1200 V 4H-SiC MOSFETs are being studied, both under the on- and off-states. Device reliability is studied by stressing the device under three conditions: (a) Gate stress - a constant gate voltage of +15 V is applied to the gate at a temperature of 175 degrees C. The forward I-V characteristics and threshold voltage are monitored for device stability, (b) Forward current stress - devices are stressed under a constant drain current of I-d = 4 A and V-g = 20 V. The devices were allowed to self-heat to a temperature of T-sink = 125 degrees C and the I-V curves are monitored with time, and (c) High temperature reverse bias testing at 1200 V and 175 degrees C to study the reliability of the devices in the off-state. Our very first measurements on (a) and (b) show very little variation between the pre-stress and post-stress I-V characteristics and threshold voltage up to 1000 hrs of operation at 175 degrees C indicating excellent stability of the MOSFETs in the on-state. In addition, high temperature reverse bias stress test looks very promising with the devices showing very little variation in the reverse leakage current with time.
引用
收藏
页码:401 / +
页数:2
相关论文
共 50 条
  • [1] A study on the reliability and stability of high voltage 4H-SiC MOSFET devices
    Krishnaswami, Sumi
    Ryu, Sei-Hyung
    Heath, Bradley
    Agarwal, Anant
    Palmour, John
    Geil, Bruce
    Lelis, Aivars
    Scozzie, Charles
    [J]. Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 1313 - 1316
  • [2] High Mobility 4H-SiC MOSFET
    O'Neill, A.
    Arith, F.
    Urresti, J.
    Vasilevskiy, K.
    Wright, N.
    Olsen, S.
    [J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 523 - 526
  • [3] High-voltage lateral RESURF MOSFET's on 4H-SiC
    Chatty, K
    Banerjee, S
    Chow, TP
    Gutmann, RJ
    [J]. IEEE ELECTRON DEVICE LETTERS, 2000, 21 (07) : 356 - 358
  • [4] Reliability Aspects of High Voltage 4H-SiC JBS Diodes
    Brosselard, Pierre
    Camara, Nicolas
    Jorda, Xavier
    Vellvehi, Miquel
    Bano, Edwige
    Millan, Jose
    Godignon, Philippe
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 935 - +
  • [5] Evaluation of high-voltage 4H-SiC switching devices
    Wang, J
    Williams, BW
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1999, 46 (03) : 589 - 597
  • [6] Investigation of the reliability of 4H-SiC MOS devices for high temperature applications
    Le-Huu, Martin
    Schmitt, Holger
    Noll, Stefan
    Grieb, Michael
    Schrey, Frederik F.
    Bauer, Anton J.
    Frey, Lothar
    Ryssel, Heiner
    [J]. MICROELECTRONICS RELIABILITY, 2011, 51 (08) : 1346 - 1350
  • [7] Reliability Investigation of 4H-SiC MOSFET Based on TCAD Simulation
    Luo, Houcai
    Huang, Yiping
    Zheng, Kai
    Tan, Chunjian
    Wang, Liming
    Wang, Shaogang
    Ye, Huaiyu
    Chen, Xianping
    [J]. 2018 19TH INTERNATIONAL CONFERENCE ON ELECTRONIC PACKAGING TECHNOLOGY (ICEPT), 2018, : 956 - 960
  • [8] Design, Fabrication and Characterization of Ultra-High Voltage 4H-SiC MOSFET Transistors
    Deng, Xiao-Chuan
    Tan, Ben
    Li, Jun-Tao
    Li, Xuan
    Zhang, Bo
    [J]. 2018 14TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2018, : 856 - 858
  • [9] A novel 4H-SiC MOSFET for low switching loss and high-reliability applications
    Han, Zhonglin
    Song, Guan
    Bai, Yun
    Chen, Hong
    Liu, Xinyu
    Lu, Jiang
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2020, 35 (08)
  • [10] Novel Gate Oxide Process for Realization of High Threshold Voltage in 4H-SiC MOSFET
    Furuhashi, Masayuki
    Tanioka, Toshikazu
    Imaizumi, Masayuki
    Miura, Naruhisa
    Yamakawa, Satoshi
    [J]. SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 985 - 988