2.4 GHz CMOS self-biased power amplifier with embedded diode lineariser

被引：8
|
作者：
Ren, Zhixiong [1 ]
Zhang, Kefeng [1 ]
Liu, Lanqi [1 ]
Liu, Zhenglin [1 ]
Chen, Xiaofei [1 ]
Liu, Dongsheng [1 ]
Zou, Xuecheng [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 19期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1049/el.2015.0917
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the V-gs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm P-sat, 28.2 dBm P-1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.
引用
收藏
页码：1501 / 1502
页数：2
相关论文
共 50 条
  • [1] A 2.4-GHz 0.18-μm CMOS self-biased cascode power amplifier
    Sowlati, T
    Leenaerts, DMW
    [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (08) : 1318 - 1324
  • [2] Self-Biased 0.13-μm CMOS 2.4-GHz Class E Cascode Power Amplifier
    Fouad, Hafez
    Zekry, Abdel-halim
    Fawzy, Khalid
    [J]. NRSC: 2009 NATIONAL RADIO SCIENCE CONFERENCE: NRSC 2009, VOLS 1 AND 2, 2009, : 770 - 781
  • [3] A 2.4-GHz 0.18-μm CMOS Class E single-ended switching power amplifier with a self-biased cascode
    Murad, Sohiful Anuar Zainol
    Pokharel, Ramesh K.
    Kanaya, Haruichi
    Yoshida, Keiji
    Nizhnik, Oleg
    [J]. AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2010, 64 (09) : 813 - 818
  • [4] A 2.4 GHz CMOS Power Amplifier
    Shen, Yi
    Tsang, Kim-Fung
    Hung, Faan Hei
    Triantis, Iasonas F.
    [J]. PROCEEDINGS 2016 IEEE 25TH INTERNATIONAL SYMPOSIUM ON INDUSTRIAL ELECTRONICS (ISIE), 2016, : 1154 - 1157
  • [5] A 3.3 V self-biased 2.4-2.5GHz high linearity PHEMT MMIC power amplifier
    Chu, CK
    Huang, HK
    Wang, CC
    Wang, YH
    Hsu, CC
    Wu, W
    Wu, CL
    Chang, CS
    [J]. ESSCIRC 2003: PROCEEDINGS OF THE 29TH EUROPEAN SOLID-STATE CIRCUITS CONFERENCE, 2003, : 667 - 670
  • [6] A 2.4 GHz CMOS Doherty power amplifier
    Liu, Chih-Yun
    Luo, Tang-Nian
    Chen, Yi-Jan Emery
    Heo, Deukhyoun
    [J]. 2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, : 885 - +
  • [7] A high speed self-biased CMOS amplifier IP core
    Zhu, ZM
    Liu, LX
    Yang, YT
    [J]. PROCEEDINGS OF 2005 IEEE INTERNATIONAL WORKSHOP ON VLSI DESIGN AND VIDEO TECHNOLOGY, 2005, : 6 - 9
  • [8] A 1v 2.4GHz CMOS power amplifier with integrated diode linearizer
    Lin, KY
    Weng, RM
    Hsiao, CL
    Wei, HC
    [J]. PROCEEDINGS OF THE 2004 IEEE ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, VOL 1 AND 2: SOC DESIGN FOR UBIQUITOUS INFORMATION TECHNOLOGY, 2004, : 109 - 111
  • [9] Self-biased transconductance amplifier
    Amendola, G
    Blanchard, Y
    Exertier, A
    Spirkovitch, S
    Lu, GN
    Alquié, G
    [J]. ELECTRONICS AND STRUCTURES FOR MEMS, 1999, 3891 : 304 - 311
  • [10] A CMOS Inverter-Based Self-biased Fully Differential Amplifier
    Custodio, Jose Rui
    Figueiredo, Michael
    Santin, Edinei
    Goes, Joao
    [J]. EMERGING TRENDS IN TECHNOLOGICAL INNOVATION, 2010, 314 : 541 - 548
12345