2.4 GHz CMOS self-biased power amplifier with embedded diode lineariser

被引：8
|
作者：
Ren, Zhixiong [1 ]
Zhang, Kefeng [1 ]
Liu, Lanqi [1 ]
Liu, Zhenglin [1 ]
Chen, Xiaofei [1 ]
Liu, Dongsheng [1 ]
Zou, Xuecheng [1 ]
机构：
[1] Huazhong Univ Sci & Technol, Sch Opt & Elect Informat, Wuhan 430074, Peoples R China
来源：
ELECTRONICS LETTERS | 2015年 / 51卷 / 19期
基金：
中国国家自然科学基金;
关键词：
D O I：
10.1049/el.2015.0917
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-linearity CMOS power amplifier (PA) operating at 2.4 GHz with an integrated diode lineariser is presented. A diode-connected N-type MOS transistor is used to increase the V-gs of the power transistor as input power increases for linearity improvement. The CMOS PA fabricated in 180 nm CMOS technology achieved 32 dB small signal gain, 30.2 dBm P-sat, 28.2 dBm P-1 dB, and a 31.1% peak power added efficiency. By adopting the proposed diode lineariser, the output 1 dB is improved from 24.9 to 28.2 dBm.
引用
收藏
页码：1501 / 1502
页数：2
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