A Self-Biased Charge-Transfer Sense Amplifier

被引：8

作者：

Patil, Sandeep ^{[1
]}

Wieckowski, Michael ^{[1
]}

Margala, Martin ^{[1
]}

机构：

[1] Univ Rochester, Dept Elect & Comp Engn, Rochester, NY 14627 USA

来源：

2007 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-11 | 2007年

关键词：

D O I：

10.1109/ISCAS.2007.377985

中图分类号：

TP18 [人工智能理论];

学科分类号：

081104 ; 0812 ; 0835 ; 1405 ;

摘要：

A Self-Biased Charge-Transfer Sense Amplifier (SBCTSA) is proposed for applications in high performance static memory. The new design incorporates an internal biasing mechanism along with a static output latch that can store the result from a read cycle indefinitely at no additional cost in power. It exhibits 23% faster sensing delay and a 37% reduction in read energy when compared to a recently proposed CTSA structure. In addition, the SB-CTSA design exhibits low sensitivity to both input capacitance and input capacitance mismatch.

引用

页码：3030 / 3033

页数：4

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