A 1v 2.4GHz CMOS power amplifier with integrated diode linearizer

被引：0
|
作者：
Lin, KY [1 ]
Weng, RM [1 ]
Hsiao, CL [1 ]
Wei, HC [1 ]
机构：
[1] Natl Dong Hwa Univ, Dept Elect Engn, Shoufeng, Hualien, Taiwan
来源：
PROCEEDINGS OF THE 2004 IEEE ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, VOL 1 AND 2: SOC DESIGN FOR UBIQUITOUS INFORMATION TECHNOLOGY | 2004年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A low voltage CMOS power amplifier with integrated diode linearization technique is proposed. It is designed for 2.4 GHz Bluetooth applications. The power amplifier is simulated with UMC 0.18 mu m CMOS technology. Under 1V supply voltage, PA can deliver 20 dBm output power with 51% power-added-efficiency. At 2.4 GHz, the reverse isolation coefficient S 12 is -27.5 dB.
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收藏
页码：109 / 111
页数：3
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