Aligned-Crystalline Si Films on Glass

被引：0

作者：

Findikoglu, Alp T. ^{[1
]}

Ugurlu, Ozan ^{[1
]}

Holesinger, Terry G. ^{[1
]}

机构：

[1] Los Alamos Natl Lab, MPA STC, Los Alamos, NM 87544 USA

来源：

AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008 | 2008年 / 1066卷

关键词：

D O I：

暂无

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report structural and electronic properties of Aligned-Crystalline Si (ACSi) Films on glass substrates. These films show enhanced majority carrier mobilities and minority carrier lifetimes with increasing crystallinity, i.e., with improving alignment and connectivity of the grains. A 0.4-mu m-thick ACSi film with a total grain mosaic spread of 4.2 degrees showed Hall mobility of 47 cm(2)/V.s for a p-type doping concentration of 1.9x10(18) cm(-3). A prototype n+/p/p+-type diode fabricated using a 4.2-mu m-thick ACSi film showed minority carrier lifetime of similar to 3.5 mu s and estimated diffusion length of similar to 30 mu m in the p layer with a doping concentration of 5x10(16) cm(-3).

引用

页码：477 / 482

页数：6

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