Reversible increase of photocurrents in excimer laser-crystallized silicon solar cells

被引:5
|
作者
Mudugamuwa, Nilushan K. [1 ]
Adikaari, A. A. D. T. [1 ]
Dissanayake, D. M. N. M. [1 ]
Stolojan, V. [1 ]
Silva, S. R. P. [1 ]
机构
[1] Univ Surrey, Fac Engn & Phys Sci, Adv Technol Inst, Guildford GU2 7XH, Surrey, England
基金
英国工程与自然科学研究理事会;
关键词
excimer laser crystallization; amorphous silicon; current density; solar cells;
D O I
10.1016/j.solmat.2008.05.012
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Excimer laser-crystallized silicon solar cells fabricated show a steady increment of the current densities with exposure to simulated sunlight, over a 30 min period. The current density of the amorphous silicon cell under identical conditions remains steady, with no significant change. The process was observed to be reversible upon cooling, and the performance increase is attributed to the energy barrier introduced by the enhanced bandgap of a nanocrystalline silicon middle layer, created as a result of the crystallization. It is suggested that the thermal energy due to prolonged illumination allows carriers to cross the barrier increasing output currents. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1378 / 1381
页数:4
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