Theoretical and experimental studies of the current-voltage and capacitance-voltage of HEMT structures and field-effect transistors

被引：4

作者：

Tarasova, E. A. ^{[1
]}

Obolenskaya, E. S. ^{[1
]}

Hananova, A. V. ^{[1
]}

Obolensky, S. V. ^{[1
]}

Zemliakov, V. E. ^{[2
]}

Egorkin, V. I. ^{[2
]}

Nezhenzev, A. V. ^{[1
]}

Saharov, A. V. ^{[3
]}

Zazul'nokov, A. F. ^{[3
]}

Lundin, V. V. ^{[3
]}

Zavarin, E. E. ^{[3
]}

Medvedev, G. V. ^{[4
]}

机构：

[1] Lobachevsky State Univ Nizhny Novgorod NNSU, Nizhnii Novgorod 603950, Russia

[2] Natl Res Univ Elect Technol MIET, Moscow 124498, Zelenograd, Russia

[3] Russian Acad Sci, Ioffe Phys Tech Inst, St Petersburg 194021, Russia

[4] JSC RPE Salut, Nizhnii Novgorod, Russia

来源：

SEMICONDUCTORS | 2016年 / 50卷 / 12期

基金：

俄罗斯基础研究基金会;

关键词：

GAAS;

D O I：

10.1134/S1063782616120216

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The sensitivity of classical n (+)/n (-) GaAs and AlGaN/GaN structures with a 2D electron gas (HEMT) and field-effect transistors based on these structures to gamma-neutron exposure is studied. The levels of their radiation hardness were determined. A method for experimental study of the structures on the basis of a differential analysis of their current-voltage characteristics is developed. This method makes it possible to determine the structure of the layers in which radiation-induced defects accumulate. A procedure taking into account changes in the plate area of the experimentally measured barrier-contact capacitance associated with the emergence of clusters of radiation-induced defects that form dielectric inclusions in the 2D-electron-gas layer is presented for the first time.

引用

页码：1574 / 1578

页数：5

共 50 条

[21] An accurate simulation study on capacitance-voltage characteristics of metal-oxide-semiconductor field-effect transistors in novel structures
Yu, Eunseon
Cho, Seongjae
Park, Byung-Gook
PHYSICA B-CONDENSED MATTER, 2017, 521 : 305 - 311
[22] A Current-Voltage Model for Graphene Electrolyte-Gated Field-Effect Transistors
Mackin, Charles
Hess, Lucas H.
Hsu, Allen
Song, Yi
Kong, Jing
Garrido, Jose Antonio
Palacios, Tomas
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2014, 61 (12) : 3971 - 3977
[23] CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS IN LINEAR AND SATURATION REGION
SCHWAB, H
ELECTRONICS LETTERS, 1974, 10 (17) : 356 - 358
[24] CURRENT-VOLTAGE CHARACTERISTICS OF INSITU DOPED POLYCRYSTALLINE DIAMOND FIELD-EFFECT TRANSISTORS
TESSMER, AJ
PLANO, LS
DREIFUS, DL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (11) : 2666 - 2667
[25] Influence of Gate Dielectrics of Field-Effect Graphene Transistors on Current-Voltage Characteristics
Abramov I.I.
Kolomeitseva N.V.
Labunov V.A.
Romanova I.A.
Shcherbakova I.Y.
Russian Microelectronics, 2021, 50 (02) : 118 - 125
[26] Effect of Uniaxial Strain on the Current-Voltage Characteristics of Graphene Nanoribbon Field-Effect Transistors
Kliros, George S.
2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 2013, : 27 - 30
[27] Current-voltage characteristics in organic field-effect transistors. Effect of interface dipoles
Sworakowski, Juliusz
CHEMICAL PHYSICS, 2015, 456 : 106 - 110
[28] An automated installation for investigating current-voltage and capacitance-voltage characteristics of semiconductor devices
Kremin', V.T.
Pribory i Tekhnika Eksperimenta, 1998, 41 (01): : 68 - 72
[29] Capacitance-voltage, current-voltage, and thermal stability of copper alloyed with aluminium or magnesium
de Felipe, TS
Murarka, SP
Bedell, S
Lanford, WA
THIN SOLID FILMS, 1998, 335 (1-2) : 49 - 53
[30] Correlation between current-voltage and capacitance-voltage characteristics of Schottky barrier diodes
Sharp Corp, Nara, Japan
IEEE Trans Electron Devices, 9 (2032-2036):

← 1 2 3 4 5 →