CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS IN LINEAR AND SATURATION REGION

被引：0

作者：

SCHWAB, H ^{[1
]}

机构：

[1] UNIV STUTTGART,INST HALBLEITER TECH,BREITSCHEID STR 2,7000 STUTTGART,WEST GERMANY

来源：

ELECTRONICS LETTERS | 1974年 / 10卷 / 17期

关键词：

D O I：

10.1049/el:19740282

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：356 / 358

页数：3

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