CURRENT-VOLTAGE CHARACTERISTICS OF MOS FIELD-EFFECT TRANSISTORS IN LINEAR AND SATURATION REGION

被引：0
|
作者：
SCHWAB, H [1 ]
机构：
[1] UNIV STUTTGART,INST HALBLEITER TECH,BREITSCHEID STR 2,7000 STUTTGART,WEST GERMANY
来源：
ELECTRONICS LETTERS | 1974年 / 10卷 / 17期
关键词：
D O I：
10.1049/el:19740282
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
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页码：356 / 358
页数：3
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