Comment on "Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation"

被引：2
|
作者：
Yarykin, N [1 ]
机构：
[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia
来源：
APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期
关键词：
D O I：
10.1063/1.1455140
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1492 / 1493
页数：2
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