Damage depth profiles in ion-implanted silicon by the photoacoustic displacement technique

被引:0
|
作者
机构
[1] Hara, Tohru
[2] Muraki, Takeshi
[3] Sakurai, Masataka
[4] Takeda, Satoru
来源
Hara, Tohru | 1600年 / 32期
关键词
Semiconducting silicon;
D O I
暂无
中图分类号
学科分类号
摘要
引用
收藏
相关论文
共 50 条
  • [1] DAMAGE DEPTH PROFILES IN ION-IMPLANTED SILICON BY THE PHOTOACOUSTIC DISPLACEMENT TECHNIQUE
    HARA, T
    MURAKI, T
    SAKURAI, M
    TAKEDA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1993, 32 (6A): : 2577 - 2581
  • [2] DAMAGE PROFILES IN ION-IMPLANTED SILICON
    TKACHEV, VD
    HOLZER, G
    CHELYADINSKII, AR
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 85 (01): : K43 - K46
  • [3] DAMAGE DEPTH PROFILES FOR HIGH-ENERGY ION-IMPLANTED SILICON
    HARA, T
    MURAKI, T
    SAKURAI, M
    TAKEDA, S
    INOUE, M
    FUJI, S
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 74 (1-2): : 191 - 196
  • [4] DAMAGE DEPTH PROFILES IN ION-IMPLANTED SILICONE
    HALE, EB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1978, 23 (08): : 1031 - 1031
  • [5] AMORPHOUS DAMAGE PROFILES IN ION-IMPLANTED SILICON
    SADOWSKI, JP
    HALE, EB
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1977, 22 (03): : 328 - 328
  • [6] Vacancy and interstitial depth profiles in ion-implanted silicon
    Lévêque, P
    Nielsen, HK
    Pellegrino, P
    Hallén, A
    Svensson, BG
    Kuznetsov, AY
    Wong-Leung, J
    Jagadish, C
    Privitera, V
    JOURNAL OF APPLIED PHYSICS, 2003, 93 (02) : 871 - 877
  • [7] DISPLACEMENT AND RECOIL IN ION-IMPLANTED SILICON
    MEDA, L
    CEROFOLINI, GF
    OTTAVIANI, G
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 454 - 456
  • [8] ION-IMPLANTED SILICON PROFILES IN GAAS
    LEE, DH
    MALBON, RM
    APPLIED PHYSICS LETTERS, 1977, 30 (07) : 327 - 329
  • [9] STRUCTURAL AND ELECTRICAL PROFILES FOR DOUBLE DAMAGE LAYERS IN ION-IMPLANTED SILICON
    SADANA, DK
    FLETCHER, J
    BOOKER, GR
    ELECTRONICS LETTERS, 1977, 13 (21) : 632 - 633
  • [10] Separation of vacancy and interstitial depth profiles in ion-implanted silicon:: Experimental observation
    Pellegrino, P
    Léveque, P
    Wong-Leung, J
    Jagadish, C
    Svensson, BG
    APPLIED PHYSICS LETTERS, 2001, 78 (22) : 3442 - 3444