Damage depth profiles in ion-implanted silicon by the photoacoustic displacement technique

被引：0
|
作者：
机构：
[1] Hara, Tohru
[2] Muraki, Takeshi
[3] Sakurai, Masataka
[4] Takeda, Satoru
来源：
Hara, Tohru | 1600年 / 32期
关键词：
Semiconducting silicon;
D O I：
暂无
中图分类号：
学科分类号：
摘要：
引用
收藏
相关论文
共 50 条
  • [41] STRUCTURE OF ION-IMPLANTED SILICON
    MOSS, SC
    FLYNN, P
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1971, 16 (12): : 1392 - &
  • [42] ION-IMPLANTED SILICON TRANSISTORS
    MARSHALL, S
    SOLID STATE TECHNOLOGY, 1974, 17 (08) : 27 - 27
  • [43] A method for the depth profiling of optically active states in ion-implanted silicon
    Aleksandrov, PA
    Baranova, EK
    Baranova, IV
    Budaragin, VV
    Litvinov, VL
    INSTRUMENTS AND EXPERIMENTAL TECHNIQUES, 1997, 40 (05) : 693 - 696
  • [44] PHOTOACOUSTIC IMAGING OF ION-IMPLANTED SEMICONDUCTOR SAMPLES
    BODZENTA, J
    PUSTELNA, B
    KLESZCZEWSKI, Z
    ULTRASONICS, 1993, 31 (05) : 315 - 319
  • [45] ANOMALOUS CARRIER PROFILES IN BF-2(+)-ION-IMPLANTED SILICON
    WADA, Y
    HASHIMOTO, N
    JOURNAL OF APPLIED PHYSICS, 1979, 50 (09) : 5720 - 5725
  • [46] OPTICAL ANALYSIS OF DAMAGE PROFILES IN ION-IMPLANTED LINBO3
    ZHANG, L
    CHANDLER, PJ
    TOWNSEND, PD
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1991, 59 (pt 2): : 1147 - 1152
  • [47] DEPTH PROFILING OF ION-IMPLANTED ALLOYS
    CAMPBNELL, AB
    SARTWELL, BD
    NEEDHAM, PB
    JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 283 - 289
  • [48] Depth profiles of cluster-ion-implanted BSi in silicon
    Liang, JH
    Chiang, SL
    Chen, CT
    Niu, H
    Tseng, MS
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 190 : 767 - 771
  • [49] DATA COMPILATION FOR DEPTH DISTRIBUTION OF ION-INDUCED DAMAGE AND ION-IMPLANTED ATOMS
    TERASAWA, M
    NAKAHIGASHI, S
    OZAWA, K
    JOURNAL OF NUCLEAR MATERIALS, 1984, 128 (DEC) : 1001 - 1005
  • [50] THE PEARSON-IV DISTRIBUTION AND ITS APPLICATION TO ION-IMPLANTED DEPTH PROFILES
    WILSON, RG
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 46 (3-4): : 141 - 147
12345