Comment on "Separation of vacancy and interstitial depth profiles in ion-implanted silicon: Experimental observation"

被引：2

作者：

Yarykin, N ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Microelect Technol, Chernogolovka 142432, Russia

来源：

APPLIED PHYSICS LETTERS | 2002年 / 80卷 / 08期

关键词：

D O I：

10.1063/1.1455140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1492 / 1493

页数：2

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