Self-organization of In nanostructures on Si surfaces

被引：6

作者：

Xu, Maojie ^{[1
]}

Okada, Arifumi ^{[1
]}

Yoshida, Shoji ^{[1
]}

Shigekawa, Hidemi ^{[1
]}

机构：

[1] Univ Tsukuba, Inst Appl Phys, CREST JST, Tsukuba, Ibaraki 3058573, Japan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 07期

关键词：

ATOMIC-STRUCTURE; GROWTH; SI(113); CHAINS;

D O I：

10.1063/1.3085960

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si (311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)-In-root 31 x root 31 surface at room temperature (RT) deposition. On a Si(111)-In-4x1/root 31 x root 31 coexisting surface, nanowires were selectively grown in the Si(111)- In 4 x 1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding root 31 x root 31 area. Details were studied using scanning tunneling microscopy. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3085960]

引用

页数：3

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