Self-organization of In nanostructures on Si surfaces

Methods of forming various In nanostructures on Si surfaces are demonstrated. Using a high-index Si (311) surface, isolated nanotriangles and wires were grown by optimizing the deposition rate and substrate temperature. In contrast, nanodots were formed by the deposition of In on a Si(111)-In-root 31 x root 31 surface at room temperature (RT) deposition. On a Si(111)-In-4x1/root 31 x root 31 coexisting surface, nanowires were selectively grown in the Si(111)- In 4 x 1 area by RT deposition through the nucleation promoted by the boundary barrier produced by the surrounding root 31 x root 31 area. Details were studied using scanning tunneling microscopy. (c) 2009 American Institute of Physics. [DOI: 10.1063/1.3085960]