Characterization of low-temperature Ultrananocrystalline™ Diamond RF MEMS resonators

被引:0
|
作者
Pacheco, Sergio P. [1 ]
Zurcher, Peter [1 ]
Young, Steven R. [1 ]
Weston, Don [1 ]
Dauksher, William J. [1 ]
Auciello, Orlando [1 ]
Carlisle, John A. [1 ]
Kane, Neil [1 ]
Birrell, James P. [1 ]
机构
[1] Freescale Semicond Inc, Technol Solut Org, Tempe, AZ 85284 USA
关键词
MEMS resonator; resonant frequency; Diamond; UNCD; acoustic velocity;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
For the first time working MEMS resonators have been produced using low-temperature deposited (550 degrees C) Ultrananocrystalline (TM) Diamond (UNCD (TM)) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young's modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15% between 15 and 25 V and the breakdown voltage behavior shows electrostatic breakdown rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of -10 to 10 dBm.
引用
收藏
页码:577 / 580
页数:4
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