Characterization of low-temperature Ultrananocrystalline™ Diamond RF MEMS resonators

被引：0

作者：

Pacheco, Sergio P. ^{[1
]}

Zurcher, Peter ^{[1
]}

Young, Steven R. ^{[1
]}

Weston, Don ^{[1
]}

Dauksher, William J. ^{[1
]}

Auciello, Orlando ^{[1
]}

Carlisle, John A. ^{[1
]}

Kane, Neil ^{[1
]}

Birrell, James P. ^{[1
]}

机构：

[1] Freescale Semicond Inc, Technol Solut Org, Tempe, AZ 85284 USA

来源：

GAAS 2005: 13TH EUROPEAN GALLIUM ARSENIDE AND OTHER COMPOUND SEMICONDUCTORS APPLICATION SYMPOSIUM, CONFERENCE PROCEEDINGS | 2005年

关键词：

MEMS resonator; resonant frequency; Diamond; UNCD; acoustic velocity;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

For the first time working MEMS resonators have been produced using low-temperature deposited (550 degrees C) Ultrananocrystalline (TM) Diamond (UNCD (TM)) films. Using a lumped-element model to fit experimental data, UNCD materials properties such as a Young's modulus of 710 GPa and an acoustic velocity of 14,243 m/s have been deduced. This is the highest acoustic velocity measured to date for a diamond MEMS structural layer deposited at low temperatures. A 10 MHz resonator shows a DC-tunability of the resonance frequency of 15% between 15 and 25 V and the breakdown voltage behavior shows electrostatic breakdown rather than electro-mechanical pull-down for higher frequency devices. Good resonant frequency reproducibility is observed when cycling the resonators over bias voltages from 15 to 25 V and over RF power levels of -10 to 10 dBm.

引用

页码：577 / 580

页数：4

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