Photoemission study of vanadium deposition on Si(100)2x1

被引：2
|
作者：
Jikimoto, T
Kisaka, M
Shibasaki, T
Yoshimoto, K
Hirai, M
Kusaka, M
Iwami, M
机构：
[1] Res. Laboratory for Surface Science, Faculty of Science, Okayama University
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
V-Si(100)2x1; low energy electron diffraction (LEED); photoemission spectroscopy (PES); synchrotron radiation (SR);
D O I：
10.1016/S0169-4332(96)00926-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The process of V/S(100)2 X 1 interface formation has been examined using low energy electron diffraction (LEED) and photoemission spectroscopy (PES) with synchrotron radiation (SR). The results allow us to conclude that the deposited V atoms interact chemically with Si atoms from the beginning of V deposition on the Si substrate.
引用
收藏
页码：384 / 387
页数：4
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