Photoemission study of vanadium deposition on Si(100)2x1

被引：2

作者：

Jikimoto, T

Kisaka, M

Shibasaki, T

Yoshimoto, K

Hirai, M

Kusaka, M

Iwami, M

机构：

[1] Res. Laboratory for Surface Science, Faculty of Science, Okayama University

来源：

APPLIED SURFACE SCIENCE | 1997年 / 113卷

关键词：

V-Si(100)2x1; low energy electron diffraction (LEED); photoemission spectroscopy (PES); synchrotron radiation (SR);

D O I：

10.1016/S0169-4332(96)00926-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The process of V/S(100)2 X 1 interface formation has been examined using low energy electron diffraction (LEED) and photoemission spectroscopy (PES) with synchrotron radiation (SR). The results allow us to conclude that the deposited V atoms interact chemically with Si atoms from the beginning of V deposition on the Si substrate.

引用

页码：384 / 387

页数：4

共 50 条

[41] VACANCY DIFFUSION ON SI(100)-(2X1)
ZHANG, ZY
CHEN, H
BOLDING, BC
LAGALLY, MG
PHYSICAL REVIEW LETTERS, 1993, 71 (22) : 3677 - 3680
[42] GENERAL COMPARISON OF THE SURFACE PROCESSES INVOLVED IN NITRIDATION OF SI(100)-2X1 BY NH3 AND IN SINX FILM DEPOSITION - A PHOTOEMISSION-STUDY
KUBLER, L
BISCHOFF, JL
BOLMONT, D
PHYSICAL REVIEW B, 1988, 38 (18): : 13113 - 13123
[43] Molecular dynamics study of stress relaxation during Ge deposition on Si(100) 2x1 substrates
Martin-Encinar, Luis
Marques, Luis A.
Aboy, Maria
Lopez, Pedro
Santos, Ivan
Pelaz, Lourdes
2023 14TH SPANISH CONFERENCE ON ELECTRON DEVICES, CDE, 2023,
[44] SI(111)2X1 STUDIES BY ANGLE RESOLVED PHOTOEMISSION
HOUZAY, F
GUICHAR, G
PINCHAUX, R
JEZEQUEL, G
SOLAL, F
BARSKY, A
STEINER, P
PETROFF, Y
SURFACE SCIENCE, 1983, 132 (1-3) : 40 - 45
[45] Growth of Ge quantum dots on Si(100)-(2x1) by pulsed laser deposition
Hegazy, MS
Elsayed-Ali, HE
JOURNAL OF APPLIED PHYSICS, 2006, 99 (05)
[46] A COMBINATION CHANNELING STUDY OF SI(100)(2X1) RECONSTRUCTED SURFACE
JIN, HS
ITO, T
GIBSON, WM
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1385 - 1390
[47] Reaction of chlorinated benzenes with Si(100)2x1: a theoretical study
Naumkin, FY
Polanyi, JC
Rogers, D
SURFACE SCIENCE, 2003, 547 (03) : 335 - 348
[48] Computer study of boron and phosphorus at the Si(100)-2x1 surface
Zavodinsky, VG
Kuyanov, IA
Chukurov, EN
EUROPEAN PHYSICAL JOURNAL B, 1998, 6 (02): : 273 - 276
[49] DISSOCIATIVE H2O ADSORPTION ON THE SI(100)2X1 AND GE(100)2X1 SURFACES
LARSSON, CUS
FLODSTROM, AS
VACUUM, 1991, 42 (04) : 297 - 300
[50] Atomic resolution imaging on Si(100)2x1 and Si(100)2x1:H surfaces with noncontact atomic force microscopy
Yokoyama, K
Ochi, T
Yoshimoto, A
Sugawara, Y
Morita, S
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2000, 39 (2A): : L113 - L115

← 1 2 3 4 5 →