DIMER CHARGE ASYMMETRY DETERMINED BY PHOTOEMISSION FROM EPITAXIAL GE ON SI(100)-(2X1)

被引:60
|
作者
LIN, DS [1 ]
MILLER, T [1 ]
CHIANG, TC [1 ]
机构
[1] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801
关键词
D O I
10.1103/PhysRevLett.67.2187
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
The charge asymmetry between the up and down atoms of an asymmetric dimer on Si(100)-(2 x 1) or Ge(100)-(2 x 1) is tied to the core-level energy splitting. Previous studies of the surface components in the core-level photoemission spectra disagreed on the assignments of the atomic origins, resulting in a disagreement on the charge asymmetry. The present core-level study of the growth of Ge on Si(100) shows clearly that the dimers are essentially covalent.
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页码:2187 / 2190
页数:4
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