RF Characterization of 28 nm FD-SOI Transistors Up To 220 GHz

被引：2

作者：

Deng, Marina ^{[1
]}

Fregonese, Sebastien ^{[1
]}

Dormieu, Benjamin ^{[2
]}

Scheer, Patrick ^{[2
]}

De Matos, Magali ^{[1
]}

Zimmer, Thomas ^{[1
]}

机构：

[1] Univ Bordeaux, IIMS Lab, 351 Cours Liberat, F-33405 Talence, France

[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France

来源：

2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2019年

关键词：

28nm FD-SOI; transistors; small-signal; RF; characterization; CALIBRATION;

D O I：

10.1109/eurosoi-ulis45800.2019.9041884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper shows the RF characterization results obtained up to 220 GHz on 28 nm fully-depleted silicon-on-insulator (FD-SOI) MOS transistors. The standard 2-dummies Open-Short de-embedding method was compared to a 3-dummies Pad-Short-Open de-embedding method. Both methods were applied to the S-parameters measurements and were used to extract the RF performances of 310/330 GHz f(T)/f(max) of this advanced transistor technology.

引用

页数：4

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