RF Characterization of 28 nm FD-SOI Transistors Up To 220 GHz

被引：2
|
作者：
Deng, Marina [1 ]
Fregonese, Sebastien [1 ]
Dormieu, Benjamin [2 ]
Scheer, Patrick [2 ]
De Matos, Magali [1 ]
Zimmer, Thomas [1 ]
机构：
[1] Univ Bordeaux, IIMS Lab, 351 Cours Liberat, F-33405 Talence, France
[2] STMicroelectronics, 850 Rue Jean Monnet, F-38926 Crolles, France
来源：
2019 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS) | 2019年
关键词：
28nm FD-SOI; transistors; small-signal; RF; characterization; CALIBRATION;
D O I：
10.1109/eurosoi-ulis45800.2019.9041884
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper shows the RF characterization results obtained up to 220 GHz on 28 nm fully-depleted silicon-on-insulator (FD-SOI) MOS transistors. The standard 2-dummies Open-Short de-embedding method was compared to a 3-dummies Pad-Short-Open de-embedding method. Both methods were applied to the S-parameters measurements and were used to extract the RF performances of 310/330 GHz f(T)/f(max) of this advanced transistor technology.
引用
收藏
页数：4
相关论文
共 50 条
  • [21] 28 nm FD SOI Technology platform RF FoM
    Esfeh, B. Kazemi
    Kilchytska, V.
    Barral, V.
    Planes, N.
    Haond, M.
    Flandre, D.
    Raskin, J. -P.
    2014 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2014,
  • [22] An LO Frequency Tripler with Phase Shifter and Detector in 28nm FD-SOI CMOS for 28-GHz Transceivers
    Gannedahl, Rikard
    Sjoland, Henrik
    2021 IEEE NORDIC CIRCUITS AND SYSTEMS CONFERENCE (NORCAS), 2021,
  • [23] 40 GHz VCO and Frequency Divider in 28 nm FD-SOI CMOS Technology for Automotive Radar Sensors
    Maiellaro, Giorgio
    Caruso, Giovanni
    Scaccianoce, Salvatore
    Giacomini, Mauro
    Scuderi, Angelo
    ELECTRONICS, 2021, 10 (17)
  • [24] A novel FVF-based GHz-range biquad in a 28 nm CMOS FD-SOI technology
    Lombardo, Matteo
    Centurelli, Francesco
    Monsurro, Pietro
    Trifiletti, Alessandro
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2024, 185
  • [25] A 77 GHz High Power and Gain Transformer-Coupled Amplifier in CMOS FD-SOI 28 nm
    Hamani, A.
    Vuong, T. P.
    Yagoub, M. C. E.
    2018 18TH MEDITERRANEAN MICROWAVE SYMPOSIUM (MMS), 2018, : 337 - 340
  • [26] A 28 GHz and 38 GHz Dual-Band Up-Conversion Mixer for 5G Applications in 22 nm FD-SOI CMOS
    Xu, Xin
    Wagner, Jens
    Ellinger, Frank
    2023 18TH CONFERENCE ON PH.D RESEARCH IN MICROELECTRONICS AND ELECTRONICS, PRIME, 2023, : 141 - 144
  • [27] A new sharp switch device integrated in 28 nm FD-SOI technology
    Bedecarrats, Thomas
    Fenouillet-Beranger, Claire
    Cristoloveanu, Sorin
    Galy, Philippe
    2018 IEEE SOI-3D-SUBTHRESHOLD MICROELECTRONICS TECHNOLOGY UNIFIED CONFERENCE (S3S), 2018,
  • [28] Statistical Analysis of Dynamic Variability in 28nm FD-SOI MOSFETs
    Ioannidis, E. G.
    Haendler, S.
    Theodorou, C. G.
    Planes, N.
    Dimitriadis, C. A.
    Ghibaudo, G.
    PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014), 2014, : 214 - 217
  • [29] Analysis and Modeling of the Charge Collection Mechanism in 28-nm FD-SOI
    Correas, V.
    Nofal, I.
    Cerba, J.
    Monsieur, F.
    Gasiot, G.
    Alexandrescu, D.
    Roche, P.
    Gonella, R.
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2018, 65 (08) : 1894 - 1899
  • [30] Evaluation of Dual Mode Logic in 28nm FD-SOI Technology
    Taco, Ramiro
    Levi, Itamar
    Lanuzza, Marco
    Fish, Alexander
    2017 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), 2017, : 2775 - 2778
12345