Statistical Analysis of Dynamic Variability in 28nm FD-SOI MOSFETs

被引：0
|
作者：
Ioannidis, E. G. [1 ,3 ]
Haendler, S. [3 ]
Theodorou, C. G. [1 ]
Planes, N. [3 ]
Dimitriadis, C. A. [2 ]
Ghibaudo, G. [1 ]
机构：
[1] INPG, MINATEC, IMEP LAHC, F-38016 Grenoble, France
[2] Aristotle Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece
[3] STMicroelectronics, F-38921 Crolles, France
来源：
PROCEEDINGS OF THE 2014 44TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE (ESSDERC 2014) | 2014年
关键词：
NOISE; FLUCTUATIONS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The impact of the dynamic variability due to low frequency and RTS fluctuations on single MOSFET operation from 28nm FD-SOI technology is investigated for the first time. It is shown that, for small rise time of ramp gate voltage, the drain current characteristics I-d(V-g) exhibit a huge sweep-to-sweep dispersion due to the low frequency noise. Such a single device dynamic variability, which scales as the reciprocal square root of device area, is added to the static mismatch contribution and could amount up to approximate to 30% of static variability sources.
引用
收藏
页码：214 / 217
页数：4
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